The NE944 series of NPN silicon epitaxial bipolar transistors is intended for use in general purpose UHF oscillator and mixer applications. It is suitable for automotive keyless entry and TV tuner designs. The device features stable oscillation and small frequency drift during changes in the supply voltage and over the ambient temperature range. ELECTRICAL .
• LOW COST
• HIGH GAIN BANDWIDTH PRODUCT: fT = 2000 MHz TYP
• LOW COLLECTOR TO BASE TIME CONSTANT: CC
•r b'b = 5 ps TYP
• LOW FEEDBACK CAPACITANCE: CRE= 0.55 pF TYP
NE944 SERIES
DESCRIPTION
The NE944 series of NPN silicon epitaxial bipolar transistors is intended for use in general purpose UHF oscillator and mixer applications. It is suitable for automotive keyless entry and TV tuner designs. The device features stable oscillation and small frequency drift during changes in the supply voltage and over the ambient temperature range.
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER EIAJ1 REG.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | NE94430 |
NEC |
NPN SILICON OSCILLATOR AND MIXER TRANSISTOR | |
2 | NE94433 |
NEC |
NPN SILICON OSCILLATOR AND MIXER TRANSISTOR | |
3 | NE9000xx |
NEC Electronics |
(NE9000/1/2 Series) Ku-Band Medium Power GaAs MESFET | |
4 | NE900175 |
NEC Electronics |
(NE9000/1/2 Series) Ku-Band Medium Power GaAs MESFET | |
5 | NE9001xx |
NEC Electronics |
(NE9000/1/2 Series) Ku-Band Medium Power GaAs MESFET | |
6 | NE9002xx |
NEC Electronics |
(NE9000/1/2 Series) Ku-Band Medium Power GaAs MESFET | |
7 | NE960R2 |
NEC |
0.2 W X / Ku-BAND POWER GaAs MES FET | |
8 | NE960R200 |
NEC |
0.2 W X / Ku-BAND POWER GaAs MES FET | |
9 | NE960R275 |
NEC |
0.2 W X / Ku-BAND POWER GaAs MES FET | |
10 | NE960R5 |
NEC |
0.5 W X / Ku-BAND POWER GaAs MES FET | |
11 | NE960R500 |
NEC |
0.5 W X / Ku-BAND POWER GaAs MES FET | |
12 | NE960R575 |
NEC |
0.5 W X / Ku-BAND POWER GaAs MES FET |