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NE960R5 - NEC

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NE960R5 0.5 W X / Ku-BAND POWER GaAs MES FET

The NE960R5 Series are 0.5 W GaAs MES FETs designed for middle power transmitter applications for X, Kuband microwave communication systems. It is capable of delivering 0.5 watt of output power (CW) with high linear gain, high efficiency and low distortion and are suitable as driver amplifiers for our X, Ku-band NEZ Series amplifiers etc. The NE961R500 and t.

Features


• High Output Power
• High Linear Gain : Po (1 dB) = +27.5 dBm TYP. : 9.0 dB TYP.
• High Power Added Efficiency: 30 % TYP. @V DS = 9 V, IDset = 180 mA, f = 14.5 GHz ORDERING INFORMATION Part Number NE960R500 NE961R500 NE960R575 NE962R575 75 Package 00 (CHIP) Supplying Form ESD protective envelope Remark To order evaluation samples, please contact your local NEC sales office. (Part number for sample order: NE960R500, NE960R575, NE961R500, NE962R575) Caution Please handle this device at static-free workstation, because this is an electrostatic sensitive device. The information in this docume.

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