Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
The NE97733 PNP silicon transistor is designed for ultrahigh speed current mode switching applications and microwave amplifiers up to 3.5 GHz. The NE97733 offers excellent performance and reliability at low cost. 33 (SOT 23 STYLE) ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER EIAJ1 REGISTERED NUMBER PACKAGE OUTLINE NE97733 2SA1977 33 UNITS GHz dB dB .
• HIGH GAIN BANDWIDTH PRODUCT: fT = 8.5 GHz TYP
• HIGH SPEED SWITCHING CHARACTERISTICS
• NPN COMPLIMENT AVAILABLE: NE68133
• HIGH INSERTION POWER GAIN: |S21E|2 = 12 dB at 1 GHz
DESCRIPTION
The NE97733 PNP silicon transistor is designed for ultrahigh speed current mode switching applications and microwave amplifiers up to 3.5 GHz. The NE97733 offers excellent performance and reliability at low cost.
33 (SOT 23 STYLE)
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER EIAJ1 REGISTERED NUMBER PACKAGE OUTLINE
NE97733 2SA1977 33 UNITS GHz dB dB μA μA pF mW 0.5 8.0 20 MIN 6.0 TYP 8.5 1.5 12.0 4.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | NE97833 |
NEC |
PNP SILICON HIGH FREQUENCY TRANSISTOR |
|
| 2 | NE9000xx |
NEC Electronics |
(NE9000/1/2 Series) Ku-Band Medium Power GaAs MESFET |
|
| 3 | NE900175 |
NEC Electronics |
(NE9000/1/2 Series) Ku-Band Medium Power GaAs MESFET |
|
| 4 | NE9001xx |
NEC Electronics |
(NE9000/1/2 Series) Ku-Band Medium Power GaAs MESFET |
|
| 5 | NE9002xx |
NEC Electronics |
(NE9000/1/2 Series) Ku-Band Medium Power GaAs MESFET |
|
| 6 | NE944 |
NEC |
NPN SILICON OSCILLATOR AND MIXER TRANSISTOR |
|
| 7 | NE94430 |
NEC |
NPN SILICON OSCILLATOR AND MIXER TRANSISTOR |
|
| 8 | NE94433 |
NEC |
NPN SILICON OSCILLATOR AND MIXER TRANSISTOR |
|
| 9 | NE960R2 |
NEC |
0.2 W X / Ku-BAND POWER GaAs MES FET |
|
| 10 | NE960R200 |
NEC |
0.2 W X / Ku-BAND POWER GaAs MES FET |
|
| 11 | NE960R275 |
NEC |
0.2 W X / Ku-BAND POWER GaAs MES FET |
|
| 12 | NE960R5 |
NEC |
0.5 W X / Ku-BAND POWER GaAs MES FET |
|