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The NE461M02 is an NPN silicon epitaxial bipolar transistor designed for medium power applications requiring high dynamic range and low intermodulation distortion. This device offers excellent performance and reliability at low cost through NEC's titanium, platinum, gold metallization system and direct nitride passivation of the surface of the chip. The NE46.
HIGH COLLECTOR CURRENT: 250 mA MAX
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NE461M02
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE M02
BOTTOM VIEW
4.5±0.1 1.6±0.2
1.5±0.1
DESCRIPTION
The NE461M02 is an NPN silicon epitaxial bipolar transistor designed for medium power applications requiring high dynamic range and low intermodulation distortion. This device offers excellent performance and reliability at low cost through NEC's titanium, platinum, gold metalliza.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | NE46100 |
NEC |
NECs NPN MEDIUM POWER MICROWAVE TRANSISTOR |
|
| 2 | NE46134 |
NEC |
NECs NPN MEDIUM POWER MICROWAVE TRANSISTOR |
|
| 3 | NE46134-T1 |
NEC |
NECs NPN MEDIUM POWER MICROWAVE TRANSISTOR |
|
| 4 | NE46234 |
CEL |
NPN SILICON RF TRANSISTOR |
|
| 5 | NE41137 |
California Eastern Laboratories |
N-Channel GaAs Dual Gate MES FET |
|
| 6 | NE416 |
NEC |
NPN MEDIUM POWER UHF-VHF TRANSISTOR |
|
| 7 | NE4210M01 |
NEC |
C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
|
| 8 | NE4210S01 |
NEC |
X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
|
| 9 | NE4210S01 |
CEL |
X to Ku BAND SUPER LOW NOISE AMPLIFIER |
|
| 10 | NE42484A |
NEC |
NONLINEAR MODEL |
|
| 11 | NE425S01 |
NEC |
C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
|
| 12 | NE429M01 |
NEC |
C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
|