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NE461M02 |
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| Part Number | NE461M02 |
| Manufacturer | NEC |
| Description | The NE461M02 is an NPN silicon epitaxial bipolar transistor designed for medium power applications requiring high dynamic range and low intermodulation distortion. This device offers excellent perform... |
| Features |
HIGH COLLECTOR CURRENT: 250 mA MAX • NEW HIGH GAIN POWER MINI-MOLD PACKAGE (SOT-89 TYPE) • HIGH OUTPUT POWER AT 1 dB COMPRESSION: www.DataSheet4U.com 27 dBm TYP at 1 GHz • HIGH IP3: 37 dBm TYP at 1 GHz • NE461M02 OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE M02 BOTTOM VIEW 4.5±0.1 1.6±0.2 1.5±0.1 DESCRIPTION The NE461M02 is an NPN silicon epitaxial bipolar transistor designed for medium power applications requiring high dynamic range and low intermodulation distortion. This device offers excellent performance and reliability at low cost through NEC's titanium, platinum, gold metalliza... |
| Document |
 NE461M02 Data Sheet
PDF 71.00KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | NE46100 |
NEC |
NECs NPN MEDIUM POWER MICROWAVE TRANSISTOR |
|
| 2 | NE46134 |
NEC |
NECs NPN MEDIUM POWER MICROWAVE TRANSISTOR |
|
| 3 | NE46134-T1 |
NEC |
NECs NPN MEDIUM POWER MICROWAVE TRANSISTOR |
|
| 4 | NE46234 |
CEL |
NPN SILICON RF TRANSISTOR |
|
| 5 | NE41137 |
California Eastern Laboratories |
N-Channel GaAs Dual Gate MES FET |
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