NE4210S01 - NEC

NE4210S01 X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

The NE4210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another commercial systems. FEATURES • Super Low Noise Figure & High Associated Gain NF = 0.5 dB TYP. Ga = 13.0 dB TYP. @f = 12 GHz • Gate Length: Lg ≤ 0.20 µm • Gate Width : Wg .

Features

• Super Low Noise Figure & High Associated Gain NF = 0.5 dB TYP. Ga = 13.0 dB TYP. @f = 12 GHz
• Gate Length: Lg ≤ 0.20 µm
• Gate Width : Wg = 160 µm ORDERING INFORMATION (PLAN) Part Number NE4210S01-T1 NE4210S01-T1B Marking L Supplying Form Tape & reel 1 kp/reel Tape & reel 4 kp/reel Remark To order evaluation samples, please contact your local NEC sales office. (Part number for sample order: NE4210S01) ABSOLUTE MAXIMUM RATINGS (TA = +25°C) Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Gate Current Total Power Dissipation Channel Temperature Storage Temperature Sym.