NEC's NE461 series of NPN silicon epitaxial bipolar transistors is designed for medium power applications requiring high dynamic range. This device exhibits an outstanding combination of high gain and low intermodulation distortion, as well as low noise figure. The NE461 series offers excellent performance and reliability at low cost through NEC's titanium, .
• HIGH DYNAMIC RANGE
• LOW IM DISTORTION: -40 dBc
Output Power, POUT (dBm)
30.0 28.0
NE46100 NE46134
NE46134 TYPICAL OUTPUT POWER vs. INPUT POWER f = 1.0 GHz, IC = 100 mA
12.5 V 10 V 26.0 24.0 22.0 20.0 18.0 16.0 14.0 12.0 5 10 15 20 25 5V
• HIGH OUTPUT POWER : 27.5 dBm at TYP
• LOW NOISE: 1.5 dB TYP at 500 MHz
• LOW COST
DESCRIPTION
NEC's NE461 series of NPN silicon epitaxial bipolar transistors is designed for medium power applications requiring high dynamic range. This device exhibits an outstanding combination of high gain and low intermodulation distortion, as well as low noise figure.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | NE46134 |
NEC |
NECs NPN MEDIUM POWER MICROWAVE TRANSISTOR | |
2 | NE46100 |
NEC |
NECs NPN MEDIUM POWER MICROWAVE TRANSISTOR | |
3 | NE461M02 |
NEC |
NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER | |
4 | NE46234 |
CEL |
NPN SILICON RF TRANSISTOR | |
5 | NE41137 |
California Eastern Laboratories |
N-Channel GaAs Dual Gate MES FET | |
6 | NE416 |
NEC |
NPN MEDIUM POWER UHF-VHF TRANSISTOR | |
7 | NE4210M01 |
NEC |
C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET | |
8 | NE4210S01 |
NEC |
X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET | |
9 | NE4210S01 |
CEL |
X to Ku BAND SUPER LOW NOISE AMPLIFIER | |
10 | NE42484A |
NEC |
NONLINEAR MODEL | |
11 | NE425S01 |
NEC |
C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET | |
12 | NE429M01 |
NEC |
C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |