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Ordering number : ENA2232 NDFP03N150C N-Channel Power MOSFET 1500V, 2.5A, 10.5Ω, TO-220F-3FS http://onsemi.com Features • On-resistance RDS(on)=8Ω(typ.) • Input Capacitance Ciss=650pF(typ.) • 10V drive Specifications Absolute Maximum Ratings at Ta = 25°C Parameter Symbol Conditions Drain to Source Voltage VDSS Gate to Source Voltage Drain Current.
• On-resistance RDS(on)=8Ω(typ.)
• Input Capacitance Ciss=650pF(typ.)
• 10V drive
Specifications
Absolute Maximum Ratings at Ta = 25°C
Parameter
Symbol
Conditions
Drain to Source Voltage
VDSS
Gate to Source Voltage Drain Current (DC) Drain Current (DC) Limited by Package Drain Current (Pulse)
VGSS ID IDL IDP
PW≤10μs, duty cycle≤1%
Allowable Power Dissipation
Channel Temperature Storage Temperature Avalanche Energy (Single Pulse)
*1 Avalanche Current
*2
*1 VDD=50V, L=10mH, IAV=2A (Fig.1)
*2 L≤10mH, Single Pulse
PD
Tch Tstg EAS IAV
Tc=25°C
TO-220F-3FS
Ratings 1500 ±30 2.5 2 5 2 32.
NDFP03N150C - INCHANGE
isc N-Channel MOSFET Transistor NDFP03N150C ·FEATURES ·High breakdown voltage ·Fast Switching Speed ·100% avalanche te.
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