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These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and fast switching. They can be used, with a minimum of effort, in most applications requiring.
-0.18 and -0.12A, -60V. RDS(ON) = 10Ω Voltage controlled p-channel small signal switch High density cell design for low RDS(ON) TO-92 and SOT-23 packages for both through hole and surface mount applications High saturation current ____________________________________________________________________________________________ S D G S D G S SOT-23 NDS0610 G TO-92 NDF0610 D Absolute Maximum Ratings Symbol Parameter TA = 25°C unless otherwise noted NDF0610 NDS0610 Units VDSS VDGR VGSS ID PD Drain-Source Voltage Drain-Gate Voltage (RGS < 1 MΩ) Gate-Source Voltage - Continuous - Nonrepetit.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | NDF06N60Z |
ON Semiconductor |
Single N-Channel TO-220FP MOSFET |
|
| 2 | NDF06N62Z |
ON Semiconductor |
N-Channel Power MOSFET |
|
| 3 | NDF02N60Z |
ON Semiconductor |
N-Channel Power MOSFET |
|
| 4 | NDF03N60Z |
ON Semiconductor |
N-Channel Power MOSFET |
|
| 5 | NDF04N60Z |
ON Semiconductor |
MOSFET |
|
| 6 | NDF04N60ZH |
ON Semiconductor |
MOSFET |
|
| 7 | NDF04N62Z |
ON Semiconductor |
N-Channel Power MOSFET |
|
| 8 | NDF05N50Z |
ON Semiconductor |
N-Channel Power MOSFET |
|
| 9 | NDF08N50Z |
ON Semiconductor |
N-Channel Power MOSFET |
|
| 10 | NDF08N60Z |
ON Semiconductor |
N-Channel Power MOSFET |
|
| 11 | NDF10N60Z |
ON Semiconductor |
N-Channel Power MOSFET |
|
| 12 | NDF10N62Z |
ON Semiconductor |
N-Channel Power MOSFET |
|