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NDF06N60Z Power MOSFET, N-Channel, 600 V, 1.2 W Features • Low ON Resistance • Low Gate Charge • ESD Diode−Protected Gate • 100% Avalanche Tested • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage Continuous Drain Current,.
• Low ON Resistance
• Low Gate Charge
• ESD Diode−Protected Gate
• 100% Avalanche Tested
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage
Continuous Drain Current, RqJC (Note 1) Continuous Drain Current
TA = 100°C, RqJC (Note 1)
VDSS
600
V
ID
7.1
A
ID
4.5
A
Pulsed Drain Current, VGS @ 10 V
IDM
28
A
Power Dissipation, RqJC
PD
Gate−to−Source Voltage
VGS
Single Pulse Avalanche Energy, L = 6.3 mH,
EAS
ID = 6.0 A
35
W
±30
V
113
mJ
ESD (.
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|---|---|---|---|---|
| 1 | NDF06N62Z |
ON Semiconductor |
N-Channel Power MOSFET |
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| 2 | NDF0610 |
Fairchild |
P-Channel MOSFET |
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| 3 | NDF02N60Z |
ON Semiconductor |
N-Channel Power MOSFET |
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| 4 | NDF03N60Z |
ON Semiconductor |
N-Channel Power MOSFET |
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| 5 | NDF04N60Z |
ON Semiconductor |
MOSFET |
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| 6 | NDF04N60ZH |
ON Semiconductor |
MOSFET |
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| 7 | NDF04N62Z |
ON Semiconductor |
N-Channel Power MOSFET |
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| 8 | NDF05N50Z |
ON Semiconductor |
N-Channel Power MOSFET |
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| 9 | NDF08N50Z |
ON Semiconductor |
N-Channel Power MOSFET |
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| 10 | NDF08N60Z |
ON Semiconductor |
N-Channel Power MOSFET |
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| 11 | NDF10N60Z |
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| 12 | NDF10N62Z |
ON Semiconductor |
N-Channel Power MOSFET |
|