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NDF04N60ZH Product Preview N-Channel Power MOSFET 600 V, 2.0 W Features • Low ON Resistance • Low Gate Charge • 100% Avalanche Tested • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Parameter Symbol Typ Unit Drain−to−Source Voltage Continuous Drain Current RqJC VDSS I.
• Low ON Resistance
• Low Gate Charge
• 100% Avalanche Tested
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Parameter
Symbol Typ Unit
Drain−to−Source Voltage Continuous Drain Current RqJC
VDSS ID
600 4.4 (Note 2)
V A
Continuous Drain Current RqJC, TA = 100°C
ID 2.8 A (Note 2)
Pulsed Drain Current, VGS @ 10 V Power Dissipation RqJC (Note 1) Gate−to−Source Voltage Single Pulse Avalanche Energy, ID = 4.0 A ESD (HBM) (JESD22−A114) RMS Isolation Voltage (t = 0.3 sec., R.H. ≤ 30%, TA = 25°C) (Figure 14).
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | NDF04N60Z |
ON Semiconductor |
MOSFET |
|
| 2 | NDF04N62Z |
ON Semiconductor |
N-Channel Power MOSFET |
|
| 3 | NDF02N60Z |
ON Semiconductor |
N-Channel Power MOSFET |
|
| 4 | NDF03N60Z |
ON Semiconductor |
N-Channel Power MOSFET |
|
| 5 | NDF05N50Z |
ON Semiconductor |
N-Channel Power MOSFET |
|
| 6 | NDF0610 |
Fairchild |
P-Channel MOSFET |
|
| 7 | NDF06N60Z |
ON Semiconductor |
Single N-Channel TO-220FP MOSFET |
|
| 8 | NDF06N62Z |
ON Semiconductor |
N-Channel Power MOSFET |
|
| 9 | NDF08N50Z |
ON Semiconductor |
N-Channel Power MOSFET |
|
| 10 | NDF08N60Z |
ON Semiconductor |
N-Channel Power MOSFET |
|
| 11 | NDF10N60Z |
ON Semiconductor |
N-Channel Power MOSFET |
|
| 12 | NDF10N62Z |
ON Semiconductor |
N-Channel Power MOSFET |
|