DataSheet.in NDF11N50Z, NDP11N50Z N-Channel Power MOSFET 500 V, 0.52 W Features • • • • Low ON Resistance Low Gate Charge 100% Avalanche Tested These Devices are Pb−Free and are RoHS Compliant VDSS 500 V Rating Drain−to−Source Voltage Continuous Drain Current, RqJC Continuous Drain Current TA = 100°C, RqJC Pulsed Drain Current, VGS @ 10 V Power Dissipatio.
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Low ON Resistance Low Gate Charge 100% Avalanche Tested These Devices are Pb−Free and are RoHS Compliant
VDSS 500 V Rating Drain−to−Source Voltage Continuous Drain Current, RqJC Continuous Drain Current TA = 100°C, RqJC Pulsed Drain Current, VGS @ 10 V Power Dissipation, RqJC (Note 1) Gate−to−Source Voltage Single Pulse Avalanche Energy, ID = 10.5 A ESD (HBM) (JESD22−A114) RMS Isolation Voltage (t = 0.3 sec., R.H. ≤ 30%, TA = 25°C) (Figure 14) Peak Diode Recovery Continuous Source Current (Body Diode) Maximum Temperature for Soldering Leads Operating Junction and Storage Temperature .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | NDF10N60Z |
ON Semiconductor |
N-Channel Power MOSFET | |
2 | NDF10N62Z |
ON Semiconductor |
N-Channel Power MOSFET | |
3 | NDF02N60Z |
ON Semiconductor |
N-Channel Power MOSFET | |
4 | NDF03N60Z |
ON Semiconductor |
N-Channel Power MOSFET | |
5 | NDF04N60Z |
ON Semiconductor |
MOSFET | |
6 | NDF04N60ZH |
ON Semiconductor |
MOSFET | |
7 | NDF04N62Z |
ON Semiconductor |
N-Channel Power MOSFET | |
8 | NDF05N50Z |
ON Semiconductor |
N-Channel Power MOSFET | |
9 | NDF0610 |
Fairchild |
P-Channel MOSFET | |
10 | NDF06N60Z |
ON Semiconductor |
Single N-Channel TO-220FP MOSFET | |
11 | NDF06N62Z |
ON Semiconductor |
N-Channel Power MOSFET | |
12 | NDF08N50Z |
ON Semiconductor |
N-Channel Power MOSFET |