NDF06N60Z |
Part Number | NDF06N60Z |
Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
Description | NDF06N60Z Power MOSFET, N-Channel, 600 V, 1.2 W Features • Low ON Resistance • Low Gate Charge • ESD Diode−Protected Gate • 100% Avalanche Tested • These Devices are Pb−Free, Halogen Free/BFR Free a... |
Features |
• Low ON Resistance • Low Gate Charge • ESD Diode−Protected Gate • 100% Avalanche Tested • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage Continuous Drain Current, RqJC (Note 1) Continuous Drain Current TA = 100°C, RqJC (Note 1) VDSS 600 V ID 7.1 A ID 4.5 A Pulsed Drain Current, VGS @ 10 V IDM 28 A Power Dissipation, RqJC PD Gate−to−Source Voltage VGS Single Pulse Avalanche Energy, L = 6.3 mH, EAS ID = 6.0 A 35 W ±30 V 113 mJ ESD (... |
Document |
NDF06N60Z Data Sheet
PDF 194.62KB |
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