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NDF04N60ZH |
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| Part Number | NDF04N60ZH |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Description | NDF04N60ZH Product Preview N-Channel Power MOSFET 600 V, 2.0 W Features • Low ON Resistance • Low Gate Charge • 100% Avalanche Tested • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS C... |
| Features |
• Low ON Resistance • Low Gate Charge • 100% Avalanche Tested • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Parameter Symbol Typ Unit Drain−to−Source Voltage Continuous Drain Current RqJC VDSS ID 600 4.4 (Note 2) V A Continuous Drain Current RqJC, TA = 100°C ID 2.8 A (Note 2) Pulsed Drain Current, VGS @ 10 V Power Dissipation RqJC (Note 1) Gate−to−Source Voltage Single Pulse Avalanche Energy, ID = 4.0 A ESD (HBM) (JESD22−A114) RMS Isolation Voltage (t = 0.3 sec., R.H. ≤ 30%, TA = 25°C) (Figure 14)... |
| Document |
 NDF04N60ZH Data Sheet
PDF 107.69KB |
| Distributor | Stock | Price | Buy |
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