The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. Application ● DC/D.
● VDS =100V,ID =135A
RDS(ON)=3.65mΩ , typical (TO-220)@ VGS=10V
RDS(ON)=3.5mΩ , typical (TO-263)@ VGS=10V
● Excellent gate charge x RDS(on) product(FOM)
● Very low on-resistance RDS(on)
● 175 °C operating temperature
● Pb-free lead plating
● Pb-free Mold Compound
100% UIS TESTED! 100% ∆Vds TESTED!
TO-220
TO-263
Schematic Diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
NCEP039N10M NCEP039N10M
TO-220
-
-
NCEP039N10MD NCEP039N10MD
TO-263
-
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
-
Limit.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | NCEP039N10M |
NCE Power Semiconductor |
N-Channel Power MOSFET | |
2 | NCEP0112AS |
NCE Power Semiconductor |
N-Channel Super Trench Power MOSFET | |
3 | NCEP0114AS |
NCE Power Semiconductor |
N-Channel Super Trench Power MOSFET | |
4 | NCEP0116AS |
NCE Power Semiconductor |
N-Channel Super Trench Power MOSFET | |
5 | NCEP0140AG |
NCE Power Semiconductor |
N-Channel Super Trench Power MOSFET | |
6 | NCEP0140AL |
NCE Power Semiconductor |
N-Channel Super Trench Power MOSFET | |
7 | NCEP0160F |
NCE Power Semiconductor |
N-Channel Super Trench Power MOSFET | |
8 | NCEP0160G |
NCE Power Semiconductor |
N-Channel Super Trench Power MOSFET | |
9 | NCEP0178 |
NCE Power Semiconductor |
N-Channel Super Trench Power MOSFET | |
10 | NCEP0178A |
NCE Power Semiconductor |
N-Channel Super Trench Power MOSFET | |
11 | NCEP0178AF |
NCE Power Semiconductor |
N-Channel Super Trench Power MOSFET | |
12 | NCEP0178AK |
NCE Power Semiconductor |
N-Channel Super Trench Power MOSFET |