NCEP0190G - NCE Power Semiconductor

NCEP0190G N-Channel Super Trench Power MOSFET

The NCEP0190G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. General Features ● VDS =100V,.

Features

● VDS =100V,ID =90A RDS(ON)=5.8mΩ (typical) @ VGS=10V
● Excellent gate charge x RDS(on) product(FOM)
● Very low on-resistance RDS(on)
● 150 °C operating temperature
● Pb-free lead plating
● 100% UIS tested Schematic Diagram DDDD DDDD Application
● DC/DC Converter
● Ideal for high-frequency switching and synchronous rectification SSSG Top View GSSS Bottom View 100% UIS TESTED! 100% ∆Vds TESTED! Package Marking and Ordering Information Device Marking Device Device Package NCEP0190G NCEP0190G DFN5X6-8L Reel .