NCE30P30G - NCE Power Semiconductor

NCE30P30G P-Channel Enhancement Mode Power MOSFET

The NCE30P30G uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or in PWM applications. General Features ● VDS = -30V,ID = -30A RDS(ON) < 10mΩ @ VGS=-10V RDS(ON) < 15mΩ @ VGS=-4.5V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Schematic diagra.

Features

● VDS = -30V,ID = -30A RDS(ON) < 10mΩ @ VGS=-10V RDS(ON) < 15mΩ @ VGS=-4.5V
● High power and current handing capability
● Lead free product is acquired
● Surface mount package Schematic diagram DDDD DDDD Application
● PWM applications
● Load switch
● Uninterruptible power supply SSSG Top View GSSS Bottom View 100% UIS TESTED! 100% ∆Vds TESTED! Package Marking and Ordering Information Device Marking NCE30P30G Device NCE30P30G Device Package DFN5X6-8L Reel Size Ø330mm Tape width 12mm Quantity 2500 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Drain-Sourc.