NCE30P25S - NCE Power Semiconductor

NCE30P25S P-Channel Enhancement Mode Power MOSFET

The NCE30P25S uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or power management. General Features ● VDS = -30V,ID = -25A RDS(ON) <9mΩ @ VGS=-10V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Application ● Power management ● Load switch Sch.

Features

● VDS = -30V,ID = -25A RDS(ON) <9mΩ @ VGS=-10V
● High power and current handing capability
● Lead free product is acquired
● Surface mount package Application
● Power management
● Load switch Schematic diagram Marking and pin assignment SOP-8 top view Package Marking and Ordering Information Device Marking Device Device Package 30P25 NCE30P25S SOP-8 Reel Size Ø330mm Tape width 12mm Quantity 2500 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous Drain Current-Pulsed (Note 1.