NCE3011E - NCE Power Semiconductor

NCE3011E N-Channel Enhancement Mode Power MOSFET

The NCE3011E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.It is ESD protested. General Features ● VDS = 30V,ID =11A RDS(ON) < 10mΩ @ VGS=10V RDS(ON) < 14mΩ @ VGS=4.5V ESD Rating: 2000V HBM ● High power and .

Features

● VDS = 30V,ID =11A RDS(ON) < 10mΩ @ VGS=10V RDS(ON) < 14mΩ @ VGS=4.5V ESD Rating: 2000V HBM
● High power and current handing capability
● Lead free product is acquired
● Surface mount package Application
●PWM application
●Load switch Schematic diagram Marking and pin assignment SOP-8 top view Package Marking and Ordering Information Device Marking Device Device Package 3011E NCE3011E SOP-8 Reel Size Ø330mm Tape width 12mm Quantity 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Curre.