NCE30P15AS - NCE Power Semiconductor

NCE30P15AS P-Channel Enhancement Mode Power MOSFET

The NCE30P15AS uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or in PWM applications. General Features ● VDS = -30V,ID = -15A RDS(ON) < 12mΩ @ VGS=-10V RDS(ON) < 15mΩ @ VGS=-4.5V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Schematic diagr.

Features

● VDS = -30V,ID = -15A RDS(ON) < 12mΩ @ VGS=-10V RDS(ON) < 15mΩ @ VGS=-4.5V
● High power and current handing capability
● Lead free product is acquired
● Surface mount package Schematic diagram Application
● PWM applications
● Load switch
● Uninterruptible power supply Marking and pin assignment SOP-8 top view Package Marking and Ordering Information Device Marking Device Device Package NCE30P15AS NCE30P15AS SOP-8 Reel Size Ø330mm Tape width 12mm Quantity 4000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source.