NCE3080L - NCE Power Semiconductor

NCE3080L NCE N-Channel Enhancement Mode Power MOSFET

The NCE3080L uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =80A RDS(ON) <6.5mΩ @ VGS=10V RDS(ON) < 10mΩ @ VGS=5V Schematic diagram ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and curren.

Features

● VDS =30V,ID =80A RDS(ON) <6.5mΩ @ VGS=10V RDS(ON) < 10mΩ @ VGS=5V Schematic diagram
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation Application
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible power supply Marking and pin assignment 100% UIS TESTED! TO-251S top view Package Marking and Ordering Information Device Marking Device Device Package NCE3080L NCE3080L TO-251S Reel Size - Tape width - .