NCE3080K - NCEPOWER

NCE3080K N-Channel Enhancement Mode Power MOSFET

The NCE3080K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES ● VDS =30V,ID =80A RDS(ON) < 6.5mΩ @ VGS=10V RDS(ON) < 10mΩ @ VGS=5V ● High density cell design for ultra low Rdson ● Fully characterized Avalanche voltage and current ● Good stability .

Features

● VDS =30V,ID =80A RDS(ON) < 6.5mΩ @ VGS=10V RDS(ON) < 10mΩ @ VGS=5V
● High density cell design for ultra low Rdson
● Fully characterized Avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability Schematic diagram Application
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● Power switching application Hard Switched and High Frequency Circuits Uninterruptible Power Supply Marking and pin Assignment 100% UIS TESTED! TO-252 top view Package Marking And Ordering Information Device Marking NCE3080K Device NCE3080K Device .