The NCE3080KA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =80A RDS(ON) <6.5mΩ @ VGS=10V RDS(ON) < 10mΩ @ VGS=5V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability .
● VDS =30V,ID =80A RDS(ON) <6.5mΩ @ VGS=10V RDS(ON) < 10mΩ @ VGS=5V
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
Schematic diagram
Application
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible power supply
Marking and pin assignment
100% UIS TESTED!
TO-252-2L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE3080KA
NCE3080KA
TO-252-2L
Reel Size -
Tape widt.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | NCE3080K |
NCEPOWER |
N-Channel Enhancement Mode Power MOSFET | |
2 | NCE3080I |
NCE Power Semiconductor |
NCE N-Channel Enhancement Mode Power MOSFET | |
3 | NCE3080IA |
NCE Power Semiconductor |
N-Channel Enhancement Mode Power MOSFET | |
4 | NCE3080L |
NCE Power Semiconductor |
NCE N-Channel Enhancement Mode Power MOSFET | |
5 | NCE3007S |
NCE Power Semiconductor |
NCE P-Channel Enhancement Mode Power MOSFET | |
6 | NCE3008M |
NCE Power Semiconductor |
N-Channel Enhancement Mode Power MOSFET | |
7 | NCE3010S |
NCEPOWER |
N-Channel Enhancement Mode Power MOSFET | |
8 | NCE3011E |
NCE Power Semiconductor |
N-Channel Enhancement Mode Power MOSFET | |
9 | NCE3012S |
NCE Power Semiconductor |
NCE P-Channel Enhancement Mode Power MOSFET | |
10 | NCE3018AS |
NCE Power Semiconductor |
N-Channel Enhancement Mode Power MOSFET | |
11 | NCE3020Q |
NCE Power Semiconductor |
N-Channel Enhancement Mode Power MOSFET | |
12 | NCE3025G |
NCE Power Semiconductor |
N-Channel Enhancement Mode Power MOSFET |