NCE01P13 - NCE Power Semiconductor

NCE01P13 P-Channel Enhancement Mode Power MOSFET

The NCE01P13 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features ● VDS =-100V,ID =-13A RDS(ON) <200mΩ @ VGS=-10V (Typ:170mΩ) ● Super high dense cell design ● Advanced trench process technology ● Reliable and rugged ● High densi.

Features

● VDS =-100V,ID =-13A RDS(ON) <200mΩ @ VGS=-10V (Typ:170mΩ)
● Super high dense cell design
● Advanced trench process technology
● Reliable and rugged
● High density celldesign for ultra low on-resistance Schematic diagram Application
● Power switch
● DC/DC converters Marking and pin assignment 100% UIS TESTED! 100% ∆Vds TESTED! TO-220-3L top view Package Marking and Ordering Information Device Marking Device Device Package NCE01P13 NCE01P13 TO-220-3L Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Vo.