NCE0102 - NCE Power Semiconductor

NCE0102 N-Channel Enhancement Mode Power MOSFET

The NCE0102 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. D G General Features ● VDS = 100V,ID = 2A RDS(ON) <240mΩ @ VGS=10V (Typ:210mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Excellent package for .

Features

● VDS = 100V,ID = 2A RDS(ON) <240mΩ @ VGS=10V (Typ:210mΩ)
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Excellent package for good heat dissipation S Schematic diagram Application
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible power supply Marking and pin assignment SOT-23 top view Package Marking and Ordering Information Device Marking Device Device Package 0102 NCE0102 SOT-23 Reel Size Ø180mm Tape width 8 mm Quantity 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise no.