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NCE01P13 |
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| Part Number | NCE01P13 |
| Manufacturer | NCE Power Semiconductor |
| Description | The NCE01P13 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features ● VD... |
| Features |
● VDS =-100V,ID =-13A RDS(ON) <200mΩ @ VGS=-10V (Typ:170mΩ) ● Super high dense cell design ● Advanced trench process technology ● Reliable and rugged ● High density celldesign for ultra low on-resistance Schematic diagram Application ● Power switch ● DC/DC converters Marking and pin assignment 100% UIS TESTED! 100% ∆Vds TESTED! TO-220-3L top view Package Marking and Ordering Information Device Marking Device Device Package NCE01P13 NCE01P13 TO-220-3L Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Vo... |
| Document |
 NCE01P13 Data Sheet
PDF 328.63KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | NCE01P13K |
NCE Power Semiconductor |
P-Channel Enhancement Mode Power MOSFET |
|
| 2 | NCE01P18 |
NCE Power Semiconductor |
P-Channel Enhancement Mode Power MOSFET |
|
| 3 | NCE01P18D |
NCE Power Semiconductor |
P-Channel Enhancement Mode Power MOSFET |
|
| 4 | NCE01P18K |
NCE Power Semiconductor |
P-Channel Enhancement Mode Power MOSFET |
|
| 5 | NCE01P18L |
NCE Power Semiconductor |
P-Channel Enhancement Mode Power MOSFET |
|