NCE01P18D - NCE Power Semiconductor

NCE01P18D P-Channel Enhancement Mode Power MOSFET

The NCE01P18D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features ● VDS =-100V,ID =-18A RDS(ON) <100mΩ @ VGS=-10V (Typ:85mΩ) ● Super high dense cell design ● Advanced trench process technology ● Reliable and rugged ● High densi.

Features

● VDS =-100V,ID =-18A RDS(ON) <100mΩ @ VGS=-10V (Typ:85mΩ)
● Super high dense cell design
● Advanced trench process technology
● Reliable and rugged
● High density cell design for ultra low on-Resistance Schematic diagram Application
●Power management in notebook computer
●Portable equipment and battery powered systems Marking and pin assignment 100% UIS TESTED! 100% ∆Vds TESTED! TO-263-2L top view Package Marking and Ordering Information Device Marking Device Device Package NCE01P18D NCE01P18D TO-263-2L Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unle.