NCE0108AS - NCE Power Semiconductor

NCE0108AS N-Channel Enhancement Mode Power MOSFET

The NCE0108AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 100V,ID =8A RDS(ON) < 28mΩ @ VGS=10V (Typ:22mΩ) ● Special process technology for high ESD capability ● High density cell design for ultra low Rdson ● Fully characterized aval.

Features

● VDS = 100V,ID =8A RDS(ON) < 28mΩ @ VGS=10V (Typ:22mΩ)
● Special process technology for high ESD capability
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current Schematic diagram Application
● DC/DC Primary Side Switch
● Telecom/Server
● Synchronous Rectification Marking and pin assignment SOP-8 top view Package Marking and Ordering Information Device Marking Device Device Package NCE0108AS NCE0108AS SOP-8 Reel Size Ø330mm Tape width 12mm Quantity 2500 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbo.