NCE0106R - NCE Power Semiconductor

NCE0106R NCE N-Channel Enhancement Mode Power MOSFET

The NCE0106R uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 100V,ID = 6A RDS(ON) < 140mΩ @ VGS=10V (Typ:110mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Excellent package for good.

Features

● VDS = 100V,ID = 6A RDS(ON) < 140mΩ @ VGS=10V (Typ:110mΩ)
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Excellent package for good heat dissipation Application
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible power supply D G S Schematic diagram SOT-223 top view Package Marking and Ordering Information Device Marking Device Device Package NCE0106R NCE0106R SOT-223-3L Reel Size Ø330mm Tape width 12mm Quantity 2500 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter.