NCE0107AK - NCE Power Semiconductor

NCE0107AK N-Channel Enhancement Mode Power MOSFET

The NCE0107AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 100V,ID = 7A RDS(ON) <160mΩ @ VGS=10V (Typ:136mΩ) RDS(ON) <170mΩ @ VGS=4.5V (Typ:140mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage a.

Features

● VDS = 100V,ID = 7A RDS(ON) <160mΩ @ VGS=10V (Typ:136mΩ) RDS(ON) <170mΩ @ VGS=4.5V (Typ:140mΩ)
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Excellent package for good heat dissipation Schematic diagram Application
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible power supply Marking and pin assignment TO-252-2L top view Package Marking and Ordering Information Device Marking Device Device Package NCE0107AK NCE0107AK TO-252-2L Reel Size Tape width Quantity Absolute Maximum Ratings .