NAND04GW3B2B - ST Microelectronics

NAND04GW3B2B NAND Flash Memories

. . . . 7 Memory array organization . . . . . . . 11 2.1 Bad Blocks . . . 11 3 Signal descriptions . . . ..

Features

oftware Block Locking
  – Hardware Program/Erase locked during Power transitions Data integrity
  – 100,000 Program/Erase cycles
  – 10 years Data Retention ECOPACK® package Development tools
  – Error Correction Code software and hardware models
  – Bad Blocks Management and Wear Leveling algorithms
  – File System OS Native reference software
  – Hardware simulation models
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■ May 2006 Rev 2 1/58 www.st.com 1 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. Contents NAND04GW3B2B, NAND08GW3B2A.