. . . . 7 Memory array organization . . . . . . . 13 2.1 Bad blocks . . . 13 3 Signals description . . . ..
■
High Density NAND Flash memories
–
– Up to 2 Gbit memory array Cost effective solutions for mass storage applications x8 or x16 bus width Multiplexed Address/ Data Pinout compatibility for all densities
FBGA
■
NAND interface
–
–
–
TSOP48 12 x 20mm
■
■
Supply voltage: 1.8V/3.0V Page size
–
– x8 device: (2048 + 64 spare) Bytes x16 device: (1024 + 32 spare) Words
■
■
VFBGA63 9.5 x 12 x 1mm VFBGA63 9 x 11 x 1mm
■
Block size
–
– x8 device: (128K + 4K spare) Bytes x16 device: (64K + 2K spare) Words Random access: 25µs (max) Sequential access: 30ns (min) Page program time: 200µs (typ)
Seri.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | NAND02G-B |
ST Microelectronics |
(NAND0xG-B) NAND Flash Memory | |
2 | NAND02GAH0L |
Numonyx |
NAND flash memories | |
3 | NAND02GRH0L |
Numonyx |
NAND flash memories | |
4 | NAND01G-A |
STMicroelectronics |
128 Mbit / 256 Mbit / 512 Mbit / 1 Gbit (x8/x16) 528 Byte/264 Word Page / 1.8V/3V / NAND Flash Memories | |
5 | NAND01G-B |
ST Microelectronics |
(NAND0xG-B) NAND Flash Memory | |
6 | NAND01G-B2B |
ST Microelectronics |
(NAND0xG-B2x) NAND Flash Memory | |
7 | NAND01G-B2B |
Numonyx |
NAND flash memory | |
8 | NAND01G-M |
ST Microelectronics |
(NANDxxx-M) NAND Flash Memories | |
9 | NAND01G-N |
STMicroelectronics |
1 Gbit (x8/x16) 2112 Byte Page NAND Flash Memory and 512 Mbit (x16) LPSDRAM 1.8V Multi-Chip Package | |
10 | NAND04G-B |
ST Microelectronics |
(NAND0xG-B) NAND Flash Memory | |
11 | NAND04GA3C2A |
ST Microelectronics |
(NAND04GA3C2A / NAND04GW3C2A) Multi-level NAND Flash Memory | |
12 | NAND04GW3B2A |
ST Microelectronics |
NAND Flash Memories |