NAND04GW3B2B |
Part Number | NAND04GW3B2B |
Manufacturer | Numonyx |
Description | ..... 7 2 Memory array organization.. . . . . . . . . . . 11 2... |
Features |
■ High density NAND Flash Memory – up to 8 Gbit memory array – Up to 256 Mbit spare area – Cost effective solution for mass storage applications ■ NAND Interface – x8 bus width – Multiplexed Address/ Data ■ Supply voltage – 3.0V device: VDD = 2.7 to 3.6V ■ Page size – (2048 + 64 spare) Bytes ■ Block size – (128K + 4K spare) Bytes ■ Page Read/Program – Random access: 25µs (max) – Sequential access: 30ns (min) – Page program time: 200µs (typ) ■ Copy Back Program mode – Fast page copy without external buffering ■ Cache Program and Cache Read modes – Internal Cache Register to improve the program ... |
Document |
NAND04GW3B2B Data Sheet
PDF 756.11KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | NAND04GW3B2A |
ST Microelectronics |
NAND Flash Memories | |
2 | NAND04GW3B2B |
ST Microelectronics |
NAND Flash Memories | |
3 | NAND04GW3C2A |
ST Microelectronics |
(NAND04GA3C2A / NAND04GW3C2A) Multi-level NAND Flash Memory | |
4 | NAND04G-B |
ST Microelectronics |
(NAND0xG-B) NAND Flash Memory | |
5 | NAND04GA3C2A |
ST Microelectronics |
(NAND04GA3C2A / NAND04GW3C2A) Multi-level NAND Flash Memory |