. . . . 7 Memory array organization . . . . . . . 11 2.1 Bad Blocks . . . 11 3 Signal descriptions . . . ..
oftware Block Locking
– Hardware Program/Erase locked during Power transitions Data integrity
– 100,000 Program/Erase cycles
– 10 years Data Retention ECOPACK® package Development tools
– Error Correction Code software and hardware models
– Bad Blocks Management and Wear Leveling algorithms
– File System OS Native reference software
– Hardware simulation models
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May 2006
Rev 2
1/58
www.st.com 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
Contents
NAND04GW3B2B, NAND08GW3B2A.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | NAND04GW3B2B |
ST Microelectronics |
NAND Flash Memories | |
2 | NAND04GW3B2B |
Numonyx |
NAND Flash Memories | |
3 | NAND04GW3C2A |
ST Microelectronics |
(NAND04GA3C2A / NAND04GW3C2A) Multi-level NAND Flash Memory | |
4 | NAND04G-B |
ST Microelectronics |
(NAND0xG-B) NAND Flash Memory | |
5 | NAND04GA3C2A |
ST Microelectronics |
(NAND04GA3C2A / NAND04GW3C2A) Multi-level NAND Flash Memory | |
6 | NAND01G-A |
STMicroelectronics |
128 Mbit / 256 Mbit / 512 Mbit / 1 Gbit (x8/x16) 528 Byte/264 Word Page / 1.8V/3V / NAND Flash Memories | |
7 | NAND01G-B |
ST Microelectronics |
(NAND0xG-B) NAND Flash Memory | |
8 | NAND01G-B2B |
ST Microelectronics |
(NAND0xG-B2x) NAND Flash Memory | |
9 | NAND01G-B2B |
Numonyx |
NAND flash memory | |
10 | NAND01G-M |
ST Microelectronics |
(NANDxxx-M) NAND Flash Memories | |
11 | NAND01G-N |
STMicroelectronics |
1 Gbit (x8/x16) 2112 Byte Page NAND Flash Memory and 512 Mbit (x16) LPSDRAM 1.8V Multi-Chip Package | |
12 | NAND02G-B |
ST Microelectronics |
(NAND0xG-B) NAND Flash Memory |