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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTW6N100E/D Designer's TMOS E-FET .™ Power Field Effect Transistor TO-247 With Isolated Mounting Hole N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In .
ry Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
• Isolated Mounting Hole Reduces Mounting Hardware MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating Drain
–Source Voltage Drain
–Gate Voltage (RGS = 1.0 MΩ) Gate
–Source Voltage — Continuous Gate
–Source Voltage — Non
–Repetitive (tp ≤ 10 ms) Drain Current — Continuous Drain Current — Continuous @ 100°C Drain Current — Single Pulse (tp ≤ 10 µs) Total Power Dissipation Derate above 25°C Operating and Storage Temperature Range Single Pu.
MTW6N100E - ON Semiconductor
MTW6N100E Preferred Device Power MOSFET 6 Amps, 1000 Volts N−Channel TO−247 This high voltage MOSFET uses an advanced te.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MTW6N60E |
Motorola |
TMOS POWER FET |
|
| 2 | MTW10N100E |
Motorola |
TMOS POWER FET |
|
| 3 | MTW10N100E |
ON Semiconductor |
Power MOSFET |
|
| 4 | MTW10N40E |
Motorola |
TMOS E-FET POWER FIELD EFFECT TRANSISTOR |
|
| 5 | MTW14N50E |
Motorola |
TMOS POWER FET |
|
| 6 | MTW14N50E |
ON Semiconductor |
Power MOSFET |
|
| 7 | MTW16N40E |
Motorola |
TMOS POWER FET |
|
| 8 | MTW16N40E |
ON Semiconductor |
Power MOSFET |
|
| 9 | MTW20N50E |
ON Semiconductor |
Power MOSFET |
|
| 10 | MTW20N50E |
Motorola |
Power MOSFET |
|
| 11 | MTW23N25E |
Motorola |
TMOS POWER FET 23 AMPERES 250 VOLTS |
|
| 12 | MTW24N40E |
Motorola |
TMOS POWER FET 24 AMPERES 400 VOLTS |
|