MTP4N50E - Motorola

MTP4N50E TMOS POWER FET

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's TMOS E-FET .™ High Energy Power FET N–Channel Enhancement–Mode Silicon Gate This advanced high voltage TMOS E–FET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain–to–source diode with fast recovery time. Designed for high volt.

Features

heet w w at .D w h S a ee U 4 t m o .c Order this document by MTP4N50E/D MTP4N50E Motorola Preferred Device TMOS POWER FET 4.0 AMPERES 500 VOLTS RDS(on) = 1.5 OHMS ® G MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain
  –Source Voltage Drain
  –Gate Voltage (RGS = 1.0 MΩ) Gate
  –Source Voltage — Continuous Gate
  –Source Voltage — Non
  –repetitive Drain Current — Continuous Drain Current — Pulsed Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Temperature Range UNCLAMPED DRAIN
  –TO
  –SOURCE AVALANCHE CHARACTERISTICS (TJ < 150°C) Single Pulse Drain
  –to
  –So.