MTP4N40E - Motorola

MTP4N40E TMOS POWER FET 4.0 AMPERES 400 VOLTS

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's TMOS E-FET .™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand high energy.

Features

idge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature ™ Data Sheet w w at .D w h S a ee U 4 t m o .c Order this document by MTP4N40E/D MTP4N40E Motorola Preferred Device TMOS POWER FET 4.0 AMPERES 400 VOLTS RDS(on) = 1.8 OHM ® D G MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain
  –to
  –Source Voltage Drain
  –to
  –Gate Voltage (RGS = 1.0 MΩ) Gate
  –to
  –Source Voltage — Continuous — Non
  –Repetitive (tp ≤ 10 ms) Drain Current — Continuous — Continuous @ 100°C — Single Pulse (tp ≤ 10 µs) Total Power Dissipation Derate above 25°C Operating and Storage Temperature R.