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MTP4N50E |
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| Part Number | MTP4N50E |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Description | MTP4N50E Designer’s™ Data Sheet TMOS E−FET.™ High Energy Power FET N−Channel Enhancement−Mode Silicon Gate This advanced high voltage TMOS E−FET is designed to withstand high energy in the avalanche m... |
| Features |
4.0 AMPERES, 500 VOLTS
RDS(on) = 1.5 W
TO−220AB CASE 221A−06
Style 5
D
G
®
S
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2006
August, 2006 − Rev. 2
1
Publication Order Number: MTP4N50E/D
MTP4N50E
MAXIMUM RATINGS (TC = 25°C unless othe... |
| Document |
 MTP4N50E Data Sheet
PDF 252.08KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | MTP4N50 |
Fairchild Semiconductor |
(MTP4N45 / MTP4N45) N-Channel Power MOSFETs |
|
| 2 | MTP4N50E |
Motorola |
TMOS POWER FET |
|
| 3 | MTP4N08 |
Fairchild Semiconductor |
(MTP4N08 / MTP4N10) N-Channel Power MOSFETs |
|
| 4 | MTP4N10 |
Fairchild Semiconductor |
N-Channel Power MOSFET |
|
| 5 | MTP4N40E |
Motorola |
TMOS POWER FET 4.0 AMPERES 400 VOLTS |
|