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MTP4N50E |
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| Part Number | MTP4N50E |
| Manufacturer | Motorola |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's TMOS E-FET .™ High Energy Power FET N–Channel Enhancement–Mode Silicon Gate This advanced high voltage TMOS E–FET is designed to withstand high ener... |
| Features |
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Order this document by MTP4N50E/D
MTP4N50E
Motorola Preferred Device
TMOS POWER FET 4.0 AMPERES 500 VOLTS RDS(on) = 1.5 OHMS
®
G
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating Drain –Source Voltage Drain –Gate Voltage (RGS = 1.0 MΩ) Gate –Source Voltage — Continuous Gate –Source Voltage — Non –repetitive Drain Current — Continuous Drain Current — Pulsed Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Temperature Range UNCLAMPED DRAIN –TO –SOURCE AVALANCHE CHARACTERISTICS (TJ < 150°C) Single Pulse Drain –to –So... |
| Document |
 MTP4N50E Data Sheet
PDF 190.66KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | MTP4N50 |
Fairchild Semiconductor |
(MTP4N45 / MTP4N45) N-Channel Power MOSFETs |
|
| 2 | MTP4N50E |
ON Semiconductor |
High Energy Power FET |
|
| 3 | MTP4N08 |
Fairchild Semiconductor |
(MTP4N08 / MTP4N10) N-Channel Power MOSFETs |
|
| 4 | MTP4N10 |
Fairchild Semiconductor |
N-Channel Power MOSFET |
|
| 5 | MTP4N40E |
Motorola |
TMOS POWER FET 4.0 AMPERES 400 VOLTS |
|