www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP30P06V/D Designer's TMOS V Power Field Effect Transistor P–Channel Enhancement–Mode Silicon Gate TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell d.
of TMOS V
• On
–resistance Area Product about One
–half that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology
• Faster Switching than E
–FET Predecessors Features Common to TMOS V and TMOS E
–FETS
• Avalanche Energy Specified
• IDSS and VDS(on) Specified at Elevated Temperature
• Static Parameters are the Same for both TMOS V and TMOS E
–FET MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating Drain
–to
–Source Voltage Drain
–to
–Gate Voltage (RGS = 1.0 MΩ) Gate
–to
–Source Voltage — Continuous Gate
–to
–Source Voltage — Non
–repetitive (tp ≤ 10 ms) Drain Current — Continuous @ 25°C Dra.
www.DataSheet4U.com MTP30P06V Preferred Device Power MOSFET 30 Amps, 60 Volts P–Channel TO–220 This Power MOSFET is de.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MTP30008 |
nELL |
Three-Phase Bridge Rectifier | |
2 | MTP30010 |
nELL |
Three-Phase Bridge Rectifier | |
3 | MTP30012 |
nELL |
Three-Phase Bridge Rectifier | |
4 | MTP30016 |
nELL |
Three-Phase Bridge Rectifier | |
5 | MTP30018 |
nELL |
Three-Phase Bridge Rectifier | |
6 | MTP3055 |
Motorola |
TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.15 OHM | |
7 | MTP3055 |
ST Microelectronics |
N - CHANNEL 60V - 0.1ohm - 12A TO-220 STripFET MOSFET | |
8 | MTP3055A |
STMicroelectronics |
N-Channel MOSFET | |
9 | MTP3055AFI |
STMicroelectronics |
N-Channel MOSFET | |
10 | MTP3055E |
ST Microelectronics |
N-CHANNEL MOSFET | |
11 | MTP3055V |
Fairchild Semiconductor |
N-Channel Enhancement Mode Field Effect Transistor | |
12 | MTP3055V |
ON Semiconductor |
Power MOSFET |