MTP3055 - Motorola

MTP3055 TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.15 OHM

MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MTP3055V/D TMOS Power Field Effect Transistor TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as with our TMOS .

Features

of TMOS V
• On
  –resistance Area Product about One
  –half that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology
• Faster Switching than E
  –FET Predecessors Features Common to TMOS V and TMOS E
  –FETS
• Avalanche Energy Specified
• IDSS and VDS(on) Specified at Elevated Temperature
• Static Parameters are the Same for both TMOS V and TMOS E
  –FET ™ Data Sheet V™ MTP3055V Motorola Preferred Device N
  –Channel Enhancement
  –Mode Silicon Gate TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.15 OHM TM D G S CASE 221A
  –06, Style 5 TO
  –220AB MAXIMUM RATINGS (TC = 25°C unless otherwise noted) R.