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MTP3055V - Fairchild Semiconductor

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MTP3055V N-Channel Enhancement Mode Field Effect Transistor

This N-Channel MOSFET has been designed specifically for low voltage, high speed switching applications i.e. power supplies and power motor controls. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies). F.

Features

• 12 A, 60 V. RDS(ON) = 0.150 Ω @ VGS = 10 V • Critical DC electrical parameters specified at elevated temperature. • Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. • 175°C maximum junction temperature rating. '
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The same part from a different manufacturer

Datasheet MTP3055V - ON Semiconductor MTP3055V

MTP3055V Preferred Device Power MOSFET 12 Amps, 60 Volts N−Channel TO−220 This Power MOSFET is designed to withstand hig.

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