MTD20N06HD - Motorola

MTD20N06HD TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.045 OHM

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD20N06HD/D ™ Data Sheet HDTMOS E-FET.™ Power Field Effect Transistor DPAK for Surface Mount Designer's MTD20N06HD Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This advanced HDTMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This.

Features

unt Package Available in 16 mm, 13
  –inch/2500 Unit Tape & Reel, Add T4 Suffix to Part Number MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain
  –Source Voltage Drain
  –Gate Voltage (RGS = 1.0 MΩ) Gate
  –Source Voltage — Continuous Gate
  –Source Voltage — Non
  –Repetitive (tp ≤ 10 ms) Drain Current — Continuous Drain Current — Continuous @ 100°C Drain Current — Single Pulse (tp ≤ 10 µs) Total Power Dissipation Derate above 25°C Total Power Dissipation @ TA = 25°C, when mounted to minimum recommended pad size Operating and Storage Temperature Range Single Pulse Drain
  –to
  –Source Avalanche Energ.