MTD20N06HDL - Motorola

MTD20N06HDL Power MOSFET

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document bt MTD20N06HDL/D Advance Information HDTMOS E-FETāā™ High Density Power FET DPAK for Surface Mount or Insertion Mount N–Channel Enhancement–Mode Silicon Gate This advanced high–cell density HDTMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy eff.

Features

SS and VDS(on) Specified at Elevated Temperature
• Surface Mount Package Available in 16 mm, 13
  –inch/2500 Unit Tape & Reel, Add T4 Suffix to Part Number
• Available in Insertion Mount, Add
  –1 or 1 to Part Number MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain
  –Source Voltage Drain
  –Gate Voltage (RGS = 1.0 MΩ) Gate
  –Source Voltage — Continuous Gate
  –Source Voltage — Non
  –Repetitive (tp ≤ 10 ms) Drain Current — Continuous @ 25°C Drain Current — Continuous @ 100°C Drain Current — Single Pulse (tp ≤ 10 µs) Total Power Dissipation Derate above 25°C Total Power Dissipation @ TC = 25°C (1).