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MTD20N06HD |
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| Part Number | MTD20N06HD |
| Manufacturer | Motorola |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD20N06HD/D ™ Data Sheet HDTMOS E-FET.™ Power Field Effect Transistor DPAK for Surface Mount Designer's MTD20N06HD Motorola Preferred ... |
| Features |
unt Package Available in 16 mm, 13 –inch/2500 Unit Tape & Reel, Add T4 Suffix to Part Number MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain –Source Voltage Drain –Gate Voltage (RGS = 1.0 MΩ) Gate –Source Voltage — Continuous Gate –Source Voltage — Non –Repetitive (tp ≤ 10 ms) Drain Current — Continuous Drain Current — Continuous @ 100°C Drain Current — Single Pulse (tp ≤ 10 µs) Total Power Dissipation Derate above 25°C Total Power Dissipation @ TA = 25°C, when mounted to minimum recommended pad size Operating and Storage Temperature Range Single Pulse Drain –to –Source Avalanche Energ... |
| Document |
 MTD20N06HD Data Sheet
PDF 274.88KB |
| Distributor | Stock | Price | Buy |
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| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | MTD20N06HDL |
ON Semiconductor |
Power MOSFET |
|
| 2 | MTD20N06HDL |
Motorola |
Power MOSFET |
|
| 3 | MTD20N06V |
Motorola |
TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.080 OHM |
|
| 4 | MTD20N03HDL |
Motorola |
TMOS POWER FET |
|
| 5 | MTD20N03HDL |
ON Semiconductor |
Power MOSFET |
|