MTD20N06V - Motorola

MTD20N06V TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.080 OHM

MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MTD20N06V/D TMOS Power Field Effect Transistor DPAK for Surface Mount TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices.

Features

of TMOS V
• On
  –resistance Area Product about One
  –half that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology
• Faster Switching than E
  –FET Predecessors ™ Data Sheet V™ MTD20N06V TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.080 OHM N
  –Channel Enhancement
  –Mode Silicon Gate TM D G S CASE 369A
  –13, Style 2 DPAK Surface Mount Features Common to TMOS V and TMOS E
  –FETS
• Avalanche Energy Specified
• IDSS and VDS(on) Specified at Elevated Temperature
• Static Parameters are the Same for both TMOS V and TMOS E
  –FET
• Surface Mount Package Available in 16 mm 13
  –inch/2500 Unit Tape &.