CYStech Electronics Corp. Spec. No. : C102G6 Issued Date : 2016.05.03 Revised Date : Page No. : 1/13 N- And P-Channel Enhancement Mode Power MOSFET MTC3588G6 BVDSS N-CH 14V ID @ TA=25 °C 5.4A(VGS=4.5V) 17.6mΩ(VGS=4.5V) RDSON(TYP.) 24.7mΩ(VGS=2.5V) 39.5mΩ(VGS=1.8V) 67.3mΩ(VGS=1.5V) P-CH -14V -3.6A(VGS=-4.5 V) 45.1mΩ(VGS=-4.5V) 65.6mΩ(VGS=-2.5V) 88.5.
• Simple drive requirement
• Low gate charge
• Low on-resistance
• Fast switching speed
• Pb-free lead plating and halogen-free package
Equivalent Circuit
MTC3588G6
Outline
TSOP-6
D2 S1 D1
G:Gate S:Source D:Drain
G2 S2 G1
Ordering Information
Device
Package
MTC3588G6-0-T1-G
TSOP-6 (Pb-free lead plating and halogen-free package)
Shipping 3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products
Packing spec, T1 : 3000 pcs / tape & reel, 7” reel
Product rank, zero for no rank produc.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MTC3588BDFA6 |
CYStech Electronics |
P- & N-Channel Enhancement Mode Power MOSFET | |
2 | MTC3588N6 |
CYStech Electronics |
P- & N-Channel Enhancement Mode Power MOSFET | |
3 | MTC3585G6 |
Cystech Electonics |
N & P-Channel Enhancement Mode Power MOSFET | |
4 | MTC3585N6 |
Cystech Electonics |
N & P-Channel Enhancement Mode Power MOSFET | |
5 | MTC3585N8J |
Cystech Electonics |
P- & N-Channel Enhancement Mode Power MOSFET | |
6 | MTC3586BDFA6 |
Cystech Electonics |
N- AND P-Channel Enhancement Mode MOSFET | |
7 | MTC3586DFA6 |
CYStech Electronics |
P- & N-Channel Enhancement Mode Power MOSFET | |
8 | MTC3587DL8 |
CYStech Electronics |
P- & N-Channel Enhancement Mode Power MOSFET | |
9 | MTC35 |
XPerts |
(MTC35 - MTC150) DC-DC Converter | |
10 | MTC3504BJ4 |
Cystech Electonics |
N & P-Channel Enhancement Mode Power MOSFET | |
11 | MTC-16101XRYHS |
Microtips |
LCD MODULE | |
12 | MTC-16201X |
ETC |
Gray STN/Yellow STN/Extended Temperature/Bottom/Top Viewing |