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RDSON(TYP.) 37mΩ(VGS=2.5V) 115mΩ(VGS=-2.5V) 82mΩ(VGS=1.5V) 280mΩ(VGS=-1.5V) The MTC3586DFA6 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single DFN2*2-6L package, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DFN2*2-6L package is universall.
• Simple drive requirement
• Low gate charge
• Low on-resistance
• Fast switching speed
• Pb-free lead plating and halogen-free package
Equivalent Circuit
MTC3586DFA6
Outline
DFN2×2-6L
G：Gate S：Source D：Drain
Ordering Information
Device
Package
MTC358.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MTC3586BDFA6 |
Cystech Electonics |
N- AND P-Channel Enhancement Mode MOSFET |
|
| 2 | MTC3585G6 |
Cystech Electonics |
N & P-Channel Enhancement Mode Power MOSFET |
|
| 3 | MTC3585N6 |
Cystech Electonics |
N & P-Channel Enhancement Mode Power MOSFET |
|
| 4 | MTC3585N8J |
Cystech Electonics |
P- & N-Channel Enhancement Mode Power MOSFET |
|
| 5 | MTC3587DL8 |
CYStech Electronics |
P- & N-Channel Enhancement Mode Power MOSFET |
|
| 6 | MTC3588BDFA6 |
CYStech Electronics |
P- & N-Channel Enhancement Mode Power MOSFET |
|
| 7 | MTC3588G6 |
CYStech Electronics |
P- & N-Channel Enhancement Mode Power MOSFET |
|
| 8 | MTC3588N6 |
CYStech Electronics |
P- & N-Channel Enhancement Mode Power MOSFET |
|
| 9 | MTC35 |
XPerts |
(MTC35 - MTC150) DC-DC Converter |
|
| 10 | MTC3504BJ4 |
Cystech Electonics |
N & P-Channel Enhancement Mode Power MOSFET |
|
| 11 | MTC-16101XRYHS |
Microtips |
LCD MODULE |
|
| 12 | MTC-16201X |
ETC |
Gray STN/Yellow STN/Extended Temperature/Bottom/Top Viewing |
|