MTC3586BDFA6 - Cystech Electonics

MTC3586BDFA6 N- AND P-Channel Enhancement Mode MOSFET

RDSON(TYP.) 37mΩ(VGS=2.5V) 115mΩ(VGS=-2.5V) 82mΩ(VGS=1.5V) 280mΩ(VGS=-1.5V) The MTC3586BDFA6 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single DFN2*2-6L package, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DFN2*2-6L package is univer.

Features

• Simple drive requirement
• Low gate charge
• Low on-resistance
• Fast switching speed
• Pb-free lead plating and halogen-free package Equivalent Circuit MTC3586BDFA6 Outline DFN2×2-6L G：Gate S：Source D：Drain Ordering Information Device Package MTC3586BDFA6-0-T1-G DFN2×2-6L (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel, 7” reel Product rank, zero for no rank products Product name MTC3586BDFA6 CYStek.