MTC3585N6 - Cystech Electonics

MTC3585N6 N & P-Channel Enhancement Mode Power MOSFET

The MTC3585N6 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single SOT-26 package, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-26 package is universally preferred for all commercial-industrial surface mount applications. Features • Simp.

Features

• Simple drive requirement
• Low gate charge
• Low on-resistance
• Fast switching speed
• Pb-free package Equivalent Circuit MTC3585N6 Outline SOT-26 D1 S1 D2 G：Gate S：Source D：Drain G1 S2 G2 MTC3585N6 CYStek Product Specification Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr CYStech Electronics Corp. Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Breakdown Voltage Gate-Source Voltage Continuous Drain Current @TA=25 °C (Note 1) Continuous Drain Current @TA=70 °C (Note 1) Pulsed Drain Current (Note 2) Total Power Dissipation (Note 1) Linear Derating Fac.